A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode

DOI10.1016/0377-0427(90)90010-WMaRDI QIDQ911239zbMATH OpenFDO

Authors P. W. Hemker

Publication date 1990

Published in Journal of Computational and Applied Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/0377-0427(90)90010-W

zbMATH Keywords

convergencediodeGauss-Seidel relaxationiteration errormultigrid methodNewton iterationone-dimensional semiconductor device simulationScharfetter-Gummel discretization

Mathematics Subject Classification ID

Partial differential equations of mathematical physics and other areas of application (35Q99) Iterative numerical methods for linear systems (65F10) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Applications to the sciences (65Z05) Technical applications of optics and electromagnetic theory (78A55)

Review text

The author studies a multigrid method for the solution of the 1-D problem (1-D diode): \(div(\epsilon \text{grad} \psi)=qn_ i(\bar p-\bar n+D)\) and \(div(\mu_ n(\text{grad} \bar n-\bar n \text{grad}(\alpha \psi)))=0,\) \(div(\mu_ p(\text{grad} \bar p+p \text{grad}(\alpha \psi)))=0,\) where \(\bar n=n/n_ i\), \(\bar p=p/n_ i\), \(\bar D=D/n_ i\); \(\psi\), n, p are the electric potential, the electron and hole densities, respectively; \(\epsilon\), q, \(\alpha\) are constant values; D is a given (nonsmooth) function of x; \(\mu_ n\), \(\mu_ p\) are functions of x, \(\psi\), n, p; \(n_ i\) is a wild function of x. Boundary conditions are of Dirichlet type or of Neumann type. A convergence parameter that is independent of the meshwidth is found; the reduction of the iteration error is reached in few iteration steps.

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Cites work

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