A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode

DOI10.1016/0377-0427(90)90010-WzbMATH Open0696.65086MaRDI QIDQ911239FDOQ911239

Authors: P. W. Hemker 

Publication date: 1990

Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)

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zbMATH Keywords

convergenceNewton iterationmultigrid methoddiodeScharfetter-Gummel discretizationGauss-Seidel relaxationiteration errorone-dimensional semiconductor device simulation

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Iterative numerical methods for linear systems (65F10) Partial differential equations of mathematical physics and other areas of application (35Q99) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Applications to the sciences (65Z05)

Cites Work

• Semiconductor device modelling from the numerical point of view
• Title not available (Why is that?)

Cited In (13)

• A physics-based strategy for choosing initial iterate for solving drift-diffusion equations
• A fast, spectrally accurate homotopy based numerical method for solving nonlinear differential equations
• Title not available (Why is that?)
• Title not available (Why is that?)
• Adaptive multigrid applied to a bipolar transistor problem
• A multigrid approach for the solution of the 2D semiconductor equations
• Title not available (Why is that?)
• Title not available (Why is that?)
• Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models
• Title not available (Why is that?)
• Title not available (Why is that?)
• Nonlinear Multigrid Applied to a One-Dimensional Stationary Semiconductor Model
• 1D numerical simulation of the mep mathematical model in ballistic diode problem

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