scientific article; zbMATH DE number 3974229
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Publication:3740177
zbMATH Open0603.65080MaRDI QIDQ3740177FDOQ3740177
Authors: Hartmut Langmach, Gerhard Telschow 
Publication date: 1986
Title of this publication is not available (Why is that?)
Recommendations
grid refinementmultigrid methodspotential equationelectron transport equationdiscretisation in timetwo-dimensional semiconductor equations
Mesh generation, refinement, and adaptive methods for the numerical solution of initial value and initial-boundary value problems involving PDEs (65M50) Motion of charged particles (78A35) Applications to the sciences (65Z05)
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- Analysis of a two-grid method for semiconductor device problem
- Efficient algorithm based on two-grid method for semiconductor device problem
- Semiconductor nanodevice simulation by multidomain spectral method with Chebyshev, prolate spheroidal and Laguerre basis functions
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- Multigrid method for numerical modelling of high temperature superconductors
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- Nonlinear Multigrid Applied to a One-Dimensional Stationary Semiconductor Model
- A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode
- Time domain global modelling of EM propagation in semiconductor using irregular grids
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- Mapped discretization strategies for curvilinear adaptively redistributed grids in semiconductor device modeling
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