A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices
DOI10.1108/03321640510615634zbMATH Open1079.82015OpenAlexW2112508032MaRDI QIDQ5707802FDOQ5707802
Authors: A. Domaingo, M. Galler, F. Schürrer 
Publication date: 24 November 2005
Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/03321640510615634
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Cites Work
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- Efficient implementation of essentially nonoscillatory shock-capturing schemes
- Efficient implementation of weighted ENO schemes
- Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
- A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
- A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
Cited In (13)
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
- A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET
- Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices
- Analysis of a new implicit solver for a semiconductor model
- A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes
- Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
- A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode
- A fast implicit solver for semiconductor models in one space dimension
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
- A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET
- A multigroup WENO solver for the non-stationary Boltzmann--Poisson system for semiconductor devices
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
Uses Software
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