A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices

DOI10.1108/03321640510615634MaRDI QIDQ5707802zbMATH OpenOpenAlexFDO

Authors A. Domaingo, M. Galler, F. Schürrer

Publication date 24 November 2005

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/03321640510615634

zbMATH Keywords

Semiconductor devicesSiliconSimulation

Mathematics Subject Classification ID

Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

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Cites work

• A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
• A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
• Efficient implementation of essentially nonoscillatory shock-capturing schemes
• Efficient implementation of weighted ENO schemes
• Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices

Cited in

(13)

• Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
• A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET
• Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
• Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices
• A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET
• A multigroup WENO solver for the non-stationary Boltzmann--Poisson system for semiconductor devices
• A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
• Analysis of a new implicit solver for a semiconductor model
• A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes
• A fast implicit solver for semiconductor models in one space dimension
• A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode

Describes a project that uses

Uses Software

• WENO

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