A fast implicit solver for semiconductor models in one space dimension

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Publication:782015

DOI10.1016/J.JCP.2020.109567zbMATH Open1437.65132arXiv1906.04174OpenAlexW2951419267MaRDI QIDQ782015FDOQ782015

Cory D. Hauck, Zheng Chen, M. Paul Laiu

Publication date: 21 July 2020

Published in: Journal of Computational Physics (Search for Journal in Brave)

Abstract: Several different approaches are proposed for solving fully implicit discretizations of a simplified Boltzmann-Poisson system with a linear relaxation-type collision kernel. This system models the evolution of free electrons in semiconductor devices under a low-density assumption. At each implicit time step, the discretized system is formulated as a fixed-point problem, which can then be solved with a variety of methods. A key algorithmic component in all the approaches considered here is a recently developed sweeping algorithm for Vlasov-Poisson systems. A synthetic acceleration scheme has been implemented to accelerate the convergence of iterative solvers by using the solution to a drift-diffusion equation as a preconditioner. The performance of four iterative solvers and their accelerated variants has been compared on problems modeling semiconductor devices with various electron mean-free-path.


Full work available at URL: https://arxiv.org/abs/1906.04174




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