A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano-devices

DOI10.1016/J.CMA.2009.05.015zbMATH Open1229.82005arXiv0902.3514OpenAlexW2108528962MaRDI QIDQ658301FDOQ658301

Yingda Cheng, Irene M. Gamba, A. Majorana, Chi-Wang Shu

Publication date: 11 January 2012

Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

Abstract: In this paper, we present results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nano-scale active regions under applied bias. The proposed numerical technique is a finite element method using discontinuous piecewise polynomials as basis functions on unstructured meshes. It is applied to simulate hot electron transport in bulk silicon, in a silicon $n^{+}$-$n$-$n^{+}$ diode and in a double gated 12nm MOSFET. Additionally, the obtained results are compared to those of a high order WENO scheme simulation and DSMC (Discrete Simulation Monte Carlo) solvers.

Full work available at URL: https://arxiv.org/abs/0902.3514

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zbMATH Keywords

discontinuous Galerkin schemesBoltzmann-Poisson systemsdeterministic numerical methodssemiconductor nano-scale devicesstatistical hot electron transport

Mathematics Subject Classification ID

Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

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Cited In (29)

• Study of Discrete Scattering Operators for Some Linear Kinetic Models
• Stochastic Galerkin methods for the Boltzmann-Poisson system
• Discontinuous Galerkin deterministic solvers for a Boltzmann-Poisson model of hot electron transport by averaged empirical pseudopotential band structures
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