Study of discrete scattering operators for some linear kinetic models

DOI10.1007/978-1-4939-6399-7_5zbMATH Open1386.82074OpenAlexW2510474496MaRDI QIDQ4606908FDOQ4606908

Fengyan Li, Yingda Cheng, Zheng Chen, Yanping Chen, A. Gillman

Publication date: 9 March 2018

Published in: Topics in Numerical Partial Differential Equations and Scientific Computing (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-1-4939-6399-7_5

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zbMATH Keywords

scatteringsemiconductor device simulationsNyström methodfirst- and second-order discontinuous Galerkin methodsfirst-order collocation methodFourier-collocation spectral method

Mathematics Subject Classification ID

Diffraction, scattering (78A45) Kinetic theory of gases in time-dependent statistical mechanics (82C40) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Spectral, collocation and related methods for initial value and initial-boundary value problems involving PDEs (65M70) Statistical mechanics of semiconductors (82D37)

Cites Work

• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• Title not available (Why is that?)
• Hybrid Gauss-Trapezoidal Quadrature Rules
• A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano-devices
• Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
• Discrete kernel preserving model for 1D electron-optical phonon scattering

Cited In (1)

• High order IMEX stochastic Galerkin schemes for linear transport equation with random inputs and diffusive scalings

Uses Software

• WENO

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