Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method
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Publication:5161647
DOI10.4208/cicp.OA-2018-0052zbMath1473.82030MaRDI QIDQ5161647
Giovanni Nastasi, Vittorio Romano, Armando Majorana
Publication date: 1 November 2021
Published in: Communications in Computational Physics (Search for Journal in Brave)
82D37: Statistical mechanics of semiconductors
65M60: Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs
82C70: Transport processes in time-dependent statistical mechanics
82M10: Finite element, Galerkin and related methods applied to problems in statistical mechanics
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Cites Work
- Unnamed Item
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- A new formula for thermal conductivity based on a hierarchy of hydrodynamical models
- A brief survey of the discontinuous Galerkin method for the Boltzmann-Poisson equations
- A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano-devices
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Cross validation of discontinuous Galerkin method and Monte Carlo simulations of charge transport in graphene on substrate
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
- Hydrodynamical model for charge transport in graphene
- DSMC method consistent with the Pauli exclusion principle and comparison with deterministic solutions for charge transport in graphene
- A Class of Stochastic Algorithms for the Wigner Equation
- Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model
- Wigner model for quantum transport in graphene
- Hydrodynamic equations for electrons in graphene obtained from the maximum entropy principle
- The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands
- Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle
- Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
- Numerical Solutions of the Spatially Homogeneous Boltzmann Equation for Electrons in n-Doped Graphene on a Substrate
- Particle Dynamics in Graphene: Collimated Beam Limit
- Monte Carlo Analysis of Thermal Effects in Monolayer Graphene
