The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands

DOI10.1088/1751-8113/41/21/215103zbMath1143.82032OpenAlexW2028478351MaRDI QIDQ3503820

Vittorio Romano, Salvatore La Rosa

Publication date: 9 June 2008

Published in: Journal of Physics A: Mathematical and Theoretical (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1088/1751-8113/41/21/215103

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Statistical mechanics of solids (82D20)

Related Items (5)

A hydrodynamical model for holes in silicon semiconductors ⋮ Electron-phonon hydrodynamical model for semiconductors ⋮ 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle ⋮ Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method ⋮ A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands

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