A hydrodynamical model for holes in silicon semiconductors
From MaRDI portal
Publication:2970528
DOI10.1108/03321641211200581zbMath1358.82039OpenAlexW1535013260MaRDI QIDQ2970528
Vittorio Romano, Giovanni Mascali
Publication date: 30 March 2017
Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/03321641211200581
Related Items (1)
Cites Work
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Non-oscillatory central differencing for hyperbolic conservation laws
- Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
- The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
- Moment closure hierarchies for kinetic theories.
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- A nonlinear determination of the distribution function of degenerate gases with an application to semiconductors
- Quasi-hydrodynamic semiconductor equations
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Central Schemes for Balance Laws of Relaxation Type
- A HYDRODYNAMICAL MODEL FOR SILICON BIPOLAR DEVICES
- A hydrodynamical model for holes in silicon semiconductors
- Information Theory and Statistical Mechanics
- The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- On a hierarchy of macroscopic models for semiconductors
- HANS BETHE'S CONTRIBUTIONS TO SOLID-STATE PHYSICS
This page was built for publication: A hydrodynamical model for holes in silicon semiconductors