A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands

DOI10.1016/J.MCM.2010.08.007zbMATH Open1211.82062OpenAlexW2069512378MaRDI QIDQ534826FDOQ534826

Authors: Giovanni Mascali, Vittorio Romano 

Publication date: 10 May 2011

Published in: Mathematical and Computer Modelling (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.mcm.2010.08.007

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zbMATH Keywords

hydrodynamical modelshole transport

Mathematics Subject Classification ID

Ionized gas flow in electromagnetic fields; plasmic flow (76X05) Statistical mechanics of semiconductors (82D37)

Cites Work

• Quasi-hydrodynamic semiconductor equations
• Information Theory and Statistical Mechanics
• Title not available (Why is that?)
• Moment closure hierarchies for kinetic theories.
• Title not available (Why is that?)
• Solid state physics.
• Title not available (Why is that?)
• Non parabolic band transport in semiconductors: closure of the moment equations
• Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
• Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
• Title not available (Why is that?)
• A nonlinear determination of the distribution function of degenerate gases with an application to semiconductors
• Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
• The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
• A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
• The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands

Cited In (16)

• A comparison between two hydrodynamical models for hole transport in silicon
• A new approach to numerical simulation of charge transport in double gate-MOSFET
• A hydrodynamic model for silicon semiconductors including crystal heating
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
• A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
• Hole mobility in silicon semiconductors
• A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Boltzmann's six-moment one-dimensional nonlinear system equations with the Maxwell-Auzhan boundary conditions
• Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires
• An improved 2D-3D model for charge transport based on the maximum entropy principle
• A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
• Title not available (Why is that?)

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