A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
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Cites work
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- scientific article; zbMATH DE number 2046275 (Why is no real title available?)
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- A nonlinear determination of the distribution function of degenerate gases with an application to semiconductors
- Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
- Information Theory and Statistical Mechanics
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- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Quasi-hydrodynamic semiconductor equations
- Solid state physics.
- The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
- The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands
Cited in
(16)- An energy transport model describing heat generation and conduction in silicon semiconductors
- Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires
- Hole mobility in silicon semiconductors
- An improved 2D-3D model for charge transport based on the maximum entropy principle
- A hydrodynamic model for silicon semiconductors including crystal heating
- The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands
- Boltzmann's six-moment one-dimensional nonlinear system equations with the Maxwell-Auzhan boundary conditions
- A comparison between two hydrodynamical models for hole transport in silicon
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
- scientific article; zbMATH DE number 2127773 (Why is no real title available?)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
- A new approach to numerical simulation of charge transport in double gate-MOSFET
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
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