A hydrodynamic model for silicon semiconductors including crystal heating
DOI10.1017/S0956792515000157zbMATH Open1383.82068MaRDI QIDQ4594545FDOQ4594545
Authors: Giovanni Mascali 
Publication date: 24 November 2017
Published in: European Journal of Applied Mathematics (Search for Journal in Brave)
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Lasers, masers, optical bistability, nonlinear optics (78A60) PDEs in connection with fluid mechanics (35Q35) Navier-Stokes equations for incompressible viscous fluids (76D05) PDEs in connection with statistical mechanics (35Q82) Interacting particle systems in time-dependent statistical mechanics (82C22) Statistical mechanics of semiconductors (82D37) Physical optics (78A10)
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Cited In (19)
- Monte Carlo Analysis of Thermal Effects in Monolayer Graphene
- An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors
- A full coupled drift-diffusion-Poisson simulation of a GFET
- Some Electric, Thermal, and Thermoelectric Properties of Suspended Monolayer Graphene
- Drift-diffusion models for the simulation of a graphene field effect transistor
- Quantum corrected hydrodynamic models for charge transport in graphene
- A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
- A new formula for thermal conductivity based on a hierarchy of hydrodynamical models
- Modeling the heating of semiconductor crystal lattice based on the maximum entropy principle
- An energy transport model describing heat generation and conduction in silicon semiconductors
- Assessment of the Constant Phonon Relaxation Time Approximation in Electron–Phonon Coupling in Graphene
- A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation
- A hierarchy of hydrodynamic models for silicon carbide semiconductors
- Seebeck effect in silicon semiconductors
- Existence and uniqueness for a two-temperature energy-transport model for semiconductors
- Charge Transport in Graphene including Thermal Effects
- An improved 2D-3D model for charge transport based on the maximum entropy principle
- A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons
- Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
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