Existence and uniqueness for a two-temperature energy-transport model for semiconductors
DOI10.1016/J.JMAA.2016.12.038zbMATH Open1457.80004OpenAlexW2563620650MaRDI QIDQ508977FDOQ508977
Authors: Yong-Cai Geng, Sumit K. Garg
Publication date: 8 February 2017
Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jmaa.2016.12.038
Recommendations
- An existence and uniqueness result for the stationary energy-transport model in semiconductor theory
- Uniqueness of stationary solutions to a simplified energy-transport model for semiconductors
- Existence analysis for a simplified transient energy-transport model for semiconductors
- A simplified stationary energy-transport model with temperature-dependent conductivity
- scientific article
Existence problems for PDEs: global existence, local existence, non-existence (35A01) Uniqueness problems for PDEs: global uniqueness, local uniqueness, non-uniqueness (35A02) PDEs in connection with classical thermodynamics and heat transfer (35Q79) Diffusive and convective heat and mass transfer, heat flow (80A19) Statistical mechanics of semiconductors (82D37)
Cites Work
- Quasi-hydrodynamic semiconductor equations
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
- Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
- A hydrodynamic model for silicon semiconductors including crystal heating
- An energy transport model describing heat generation and conduction in silicon semiconductors
- Electron-phonon hydrodynamical model for semiconductors
- A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
- Semiconductor device design using the \textsc{BiMADS} algorithm
- Title not available (Why is that?)
- Hierarchy of semiconductor equations: relaxation limits with initial layers for large initial data.
- Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
- 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
Cited In (8)
- Uniqueness of stationary solutions to a simplified energy-transport model for semiconductors
- Title not available (Why is that?)
- Fully discrete approximations and an \textit{a priori} error analysis of a two-temperature thermo-elastic model with microtemperatures
- Title not available (Why is that?)
- Existence analysis for a simplified transient energy-transport model for semiconductors
- The solution ofLyumkis energy transport model in semiconductor science
- Existence analysis of a degenerate diffusion system for heat-conducting gases
- Energy-transport systems for optical lattices: Derivation, analysis, simulation
This page was built for publication: Existence and uniqueness for a two-temperature energy-transport model for semiconductors
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q508977)