Existence and uniqueness for a two-temperature energy-transport model for semiconductors
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Existence problems for PDEs: global existence, local existence, non-existence (35A01) Uniqueness problems for PDEs: global uniqueness, local uniqueness, non-uniqueness (35A02) PDEs in connection with classical thermodynamics and heat transfer (35Q79) Diffusive and convective heat and mass transfer, heat flow (80A19) Statistical mechanics of semiconductors (82D37)
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- scientific article; zbMATH DE number 6611671
Cites work
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- Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- Quasi-hydrodynamic semiconductor equations
- Semiconductor device design using the \textsc{BiMADS} algorithm
Cited in
(9)- Uniqueness of stationary solutions to a simplified energy-transport model for semiconductors
- scientific article; zbMATH DE number 6611671 (Why is no real title available?)
- Fully discrete approximations and an \textit{a priori} error analysis of a two-temperature thermo-elastic model with microtemperatures
- scientific article; zbMATH DE number 1960988 (Why is no real title available?)
- Existence analysis for a simplified transient energy-transport model for semiconductors
- The solution ofLyumkis energy transport model in semiconductor science
- Existence analysis of a degenerate diffusion system for heat-conducting gases
- Analysis of a hybrid model for the electro-thermal behavior of semiconductor heterostructures
- Energy-transport systems for optical lattices: Derivation, analysis, simulation
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