An energy transport model describing heat generation and conduction in silicon semiconductors
From MaRDI portal
Publication:637525
DOI10.1007/s10955-011-0247-2zbMath1251.82063OpenAlexW2023371707MaRDI QIDQ637525
Vincenza Di Stefano, Orazio Muscato
Publication date: 6 September 2011
Published in: Journal of Statistical Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s10955-011-0247-2
Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70)
Related Items (15)
A new formula for thermal conductivity based on a hierarchy of hydrodynamical models ⋮ Electron transport in silicon nanowires having different cross-sections ⋮ Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors ⋮ Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ Seebeck effect in silicon semiconductors ⋮ Charge Transport in Graphene including Thermal Effects ⋮ A hydrodynamic model for silicon semiconductors including crystal heating ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ Heat generation in silicon nanometric semiconductor devices ⋮ Existence and uniqueness for a two-temperature energy-transport model for semiconductors ⋮ Electron-phonon interactions in the Fermi-Dirac spintronics ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire ⋮ Generation-recombination Models in the Matrix Kinetic Approach to Spintronics
Cites Work
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- Partial moment entropy approximation to radiative heat transfer
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- Non parabolic band transport in semiconductors: closure of the moment equations
- Energy transport in semiconductor devices
- Consistency of the phenomenological theories of wave-type heat transport with the hydrodynamics of a phonon gas
- EXTENDED HYDRODYNAMIC MODEL FOR THE COUPLED ELECTRON-PHONON SYSTEM IN SILICON SEMICONDUCTORS
- Understanding Non-equilibrium Thermodynamics
- Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
- Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
- On a hierarchy of macroscopic models for semiconductors
- Nine-moment phonon hydrodynamics based on the maximum-entropy closure: one-dimensional flow
This page was built for publication: An energy transport model describing heat generation and conduction in silicon semiconductors