Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model
DOI10.1137/140995623zbMATH Open1327.82093OpenAlexW1265954734MaRDI QIDQ2945469FDOQ2945469
Authors: O. Muscato, V. Di Stefano 
Publication date: 11 September 2015
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/140995623
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Irreversible thermodynamics, including Onsager-Machlup theory (82B35) Kinetic theory of gases in equilibrium statistical mechanics (82B40) Statistical mechanics of semiconductors (82D37)
Cites Work
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Cited In (10)
- An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors
- Title not available (Why is that?)
- Comparison of two-valley hydrodynamic model in bulk SiC and ZnO materials
- A hierarchy of macroscopic models for phonon transport in graphene
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation
- A hierarchy of hydrodynamic models for silicon carbide semiconductors
- Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method
- Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires
- Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
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