A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation
From MaRDI portal
Publication:493433
DOI10.1016/J.CAMWA.2012.03.100zbMath1319.82012OpenAlexW2005879539MaRDI QIDQ493433
Vincenza Di Stefano, Wolfgang Wagner, Orazio Muscato
Publication date: 3 September 2015
Published in: Computers \& Mathematics with Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.camwa.2012.03.100
Related Items (11)
Electron transport in silicon nanowires having different cross-sections ⋮ Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ Monte Carlo Analysis of Thermal Effects in Monolayer Graphene ⋮ Stochastic solution of population balance equations for reactor networks ⋮ Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ Heat generation in silicon nanometric semiconductor devices ⋮ A stochastic algorithm without time discretization error for the Wigner equation ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire ⋮ Assessment of the Constant Phonon Relaxation Time Approximation in Electron–Phonon Coupling in Graphene
This page was built for publication: A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation
