Analysis of electrical and thermal responses of n-doped silicon to an impinging electron beam and joule heating

DOI10.1016/J.IJHEATMASSTRANSFER.2009.01.007MaRDI QIDQ2270912zbMATH OpenOpenAlexFDO

Authors Basil T. Wong, M. Pinar Mengüç

Publication date 29 July 2009

Published in International Journal of Heat and Mass Transfer (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.ijheatmasstransfer.2009.01.007

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Ionized gas flow in electromagnetic fields; plasmic flow (76X05) Motion of charged particles (78A35) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

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Cites work

• A dielectric formulation of the many body problem: Application to the free electron gas
• Full hydrodynamic simulation of GaAs MESFETs
• scientific article; zbMATH DE number 3144471 (Why is no real title available?)
• scientific article; zbMATH DE number 3825358 (Why is no real title available?)
• scientific article; zbMATH DE number 3059511 (Why is no real title available?)
• NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• Thermal conduction induced by electron-beam
• Time-domain simulation of the full hydrodynamic model

Cited in

(4)

• Thermal conduction induced by electron-beam
• A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation
• Analysis of thermal effects accompanying the interaction of electron beams with ferroelectric crystals
• Experimental characterization of anode heating by electron emission from a multi-walled carbon nanotube

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