Full hydrodynamic simulation of GaAs MESFETs

DOI10.1002/JNM.523MaRDI QIDQ4458783zbMATH OpenOpenAlexFDO

Authors Andreas Aste, R. Vahldieck, Marcel Rohner

Publication date 15 March 2004

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/physics/0402098

zbMATH Keywords

Monte Carlo methodsupwind discretizationMESFETssemiconductor device modellinghydrodynamic modelvelocity overshoothot electronssubmicron devicescharge transport models

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Abstract: A finite difference upwind discretization scheme in two dimensions is presented in detail for the transient simulation of the highly coupled non-linear partial differential equations of the full hydrodynamic model, providing thereby a practical engineering tool for improved charge carrier transport simulations at high electric fields and frequencies. The discretization scheme preserves the conservation and transportive properties of the equations. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of micro- and optoelectronics, where simplified charge transport models like the drift-diffusion model and the energy balance model are no longer applicable. Results of extensive numerical simulations are shown for a two-dimensional MESFET device. A comparison of the hydrodynamic model to the commonly used energy balance model is given and the accuracy of the results is discussed.

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(9)

• A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation
• Simulation of MESFET device by streamline‐diffusion finite element methods
• A shock-capturing upwind discretization method for characterization of SiC MESFETs
• Analysis of electrical and thermal responses of \(n\)-doped silicon to an impinging electron beam and joule heating
• Numerical simulation of the process of formation of shock waves in electron gas in a field-effect transistor
• Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors
• Efficient numerical simulation of GaAs MESFET's based on energy model and using interpolating wavelet
• Numerical method for 2D simulation of a silicon MESFET with a hydrodynamical model based on the maximum entropy principle
• Efficient implementation of the convective terms in the hydrodynamic equations

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