Full hydrodynamic simulation of GaAs MESFETs

DOI10.1002/JNM.523zbMATH Open1188.82141arXivphysics/0402098OpenAlexW3105383601MaRDI QIDQ4458783FDOQ4458783

Authors: Andreas Aste, R. Vahldieck, Marcel Rohner 

Publication date: 15 March 2004

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Abstract: A finite difference upwind discretization scheme in two dimensions is presented in detail for the transient simulation of the highly coupled non-linear partial differential equations of the full hydrodynamic model, providing thereby a practical engineering tool for improved charge carrier transport simulations at high electric fields and frequencies. The discretization scheme preserves the conservation and transportive properties of the equations. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of micro- and optoelectronics, where simplified charge transport models like the drift-diffusion model and the energy balance model are no longer applicable. Results of extensive numerical simulations are shown for a two-dimensional MESFET device. A comparison of the hydrodynamic model to the commonly used energy balance model is given and the accuracy of the results is discussed.

Full work available at URL: https://arxiv.org/abs/physics/0402098

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zbMATH Keywords

Monte Carlo methodsupwind discretizationMESFETssemiconductor device modellinghydrodynamic modelvelocity overshoothot electronssubmicron devicescharge transport models

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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• Efficient numerical simulation of GaAs MESFET's based on energy model and using interpolating wavelet
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