Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors
DOI10.1108/03321640210416296zbMATH Open1002.82536OpenAlexW2146994865MaRDI QIDQ4537264FDOQ4537264
Authors: Nadia Lamari, Mohamed Mfitih, Nabil Nassif 
Publication date: 5 August 2002
Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/03321640210416296
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Cites Work
- A new finite element formulation for computational fluid dynamics. III: The generalized streamline operator for multidimensional advective- diffusive systems
- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
- Conditioning of the Steady State Semiconductor Device Problem
- NEW MIXED FINITE ELEMENT SCHEMES FOR CURRENT CONTINUITY EQUATIONS
- Numerical simulation of semiconductor devices
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- MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
- MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
Cited In (7)
- Comparing the MESFET and HEMT models for efficient circuit design
- Thermal modeling of GaN HEMTs
- Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: A Monte Carlo simulation study.
- Hot-electron numerical modelling of short gate length pHEMTs applied to novel field plate structures
- Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT
- Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures
- Stochastic simulation of electron transport in a strong electrical field in low-dimensional heterostructures
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