Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors

DOI10.1108/03321640210416296MaRDI QIDQ4537264zbMATH OpenOpenAlexFDO

Authors Nadia Lamari, Mohamed Mfitih, Nabil Nassif

Publication date 5 August 2002

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/03321640210416296

zbMATH Keywords

simulationsfinite elementdrift-diffusion modelsemiconductorhydrodynamic modelsubmicron pseudomorphic AlGaAs/InGaAs/GaAs HEMT simulations

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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Cites work

• scientific article; zbMATH DE number 952100 (Why is no real title available?)
• A new finite element formulation for computational fluid dynamics. III: The generalized streamline operator for multidimensional advective- diffusive systems
• Conditioning of the Steady State Semiconductor Device Problem
• MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
• MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
• NEW MIXED FINITE ELEMENT SCHEMES FOR CURRENT CONTINUITY EQUATIONS
• Numerical simulation of semiconductor devices
• Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models

Cited in

(7)

• Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: A Monte Carlo simulation study.
• Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures
• Hot-electron numerical modelling of short gate length pHEMTs applied to novel field plate structures
• Thermal modeling of GaN HEMTs
• Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT
• Comparing the MESFET and HEMT models for efficient circuit design
• Stochastic simulation of electron transport in a strong electrical field in low-dimensional heterostructures

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