Numerical method for 2D simulation of a silicon MESFET with a hydrodynamical model based on the maximum entropy principle

DOI10.1137/070706537MaRDI QIDQ3567016zbMATH OpenOpenAlexFDO

Authors A. S. Ibragimova, A. M. Blokhin

Publication date 10 June 2010

Published in SIAM Journal on Scientific Computing (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1137/070706537

zbMATH Keywords

Poisson equationmethod of linesBoltzmann transport equationdrift-diffusion equationsstabilization methodenergy-transport modelsthe hydrodynamical modelscubic interpolation \(\mathbb{C}^2\)-splinedifference-differential model

Mathematics Subject Classification ID

Numerical computation using splines (65D07) Method of lines for initial value and initial-boundary value problems involving PDEs (65M20) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of semiconductors (82D37)

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Cited in

(15)

• Numerical analysis of the kinetic equation describing isotropic 4-wave interactions in non-linear physical systems
• Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors
• Application of Rational Interpolations for Solving Boundary Value Problems with Singularities
• A new approach to numerical simulation of charge transport in double gate-MOSFET
• Numerical analysis of a self-similar turbulent flow in Bose-Einstein condensates
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• scientific article; zbMATH DE number 5539998 (Why is no real title available?)
• On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor
• On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel
• Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
• Development and analysis of the fast pseudo spectral method for solving nonlinear Dirichlet problems
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Algorithm for solving the four-wave kinetic equation in problems of wave turbulence
• Full hydrodynamic simulation of GaAs MESFETs

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