Simulation of MESFET device by streamline‐diffusion finite element methods

DOI10.1108/03321649610154186zbMath0862.65084MaRDI QIDQ4331566

Xunlei Jiang

Publication date: 4 February 1997

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321649610154186

zbMATH Keywords

streamline-diffusion finite element method; hydrodynamic model; electrical engineering; Scharfetter-Gummel discretization; semiconductor device models; metal-semiconductor field effect transistor

Mathematics Subject Classification ID

35Q60: PDEs in connection with optics and electromagnetic theory

65M60: Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs

78A55: Technical applications of optics and electromagnetic theory

65Z05: Applications to the sciences

Cites Work

• A new finite element formulation for computational fluid dynamics. III: The generalized streamline operator for multidimensional advective- diffusive systems
• Conditioning of the Steady State Semiconductor Device Problem
• SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS
• A PHASE PLANE ANALYSIS OF TRANSONIC SOLUTIONS FOR THE HYDRODYNAMIC SEMICONDUCTOR MODEL
• A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL