SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS

DOI10.1108/EB010063MaRDI QIDQ3482800zbMATH OpenOpenAlexFDO

Authors

Publication date 1989

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb010063

zbMATH Keywords

numerical dissipationtransport equationsNumerical resultsstable algorithmsemiconductor device modelingadaptive finite element refinementflux-upwind finite element method

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Applications to the sciences (65Z05)

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Cites work

• Exponential upwinding and integrating factors for symmetrization

Cited in

(10)

• A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
• Enriched residual free bubbles for semiconductor device simulation
• A perspective on adaptive modeling and meshing (AM\& M)
• Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors
• A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
• Simulation of MESFET device by streamline‐diffusion finite element methods
• Upwind finite volume element methods for one-dimensional semiconductor device
• Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method
• Hydrodynamic modeling of short-channel devices using an upwind flux vector splitting scheme.
• Multilevel solution of augmented drift‐diffusion equations

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