SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS

DOI10.1108/EB010063zbMATH Open0703.65083OpenAlexW2008786640MaRDI QIDQ3482800FDOQ3482800

Authors:

Publication date: 1989

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010063

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zbMATH Keywords

numerical dissipationtransport equationsNumerical resultsstable algorithmsemiconductor device modelingadaptive finite element refinementflux-upwind finite element method

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Applications to the sciences (65Z05)

Cites Work

• Exponential upwinding and integrating factors for symmetrization

Cited In (10)

• Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method
• Enriched residual free bubbles for semiconductor device simulation
• Simulation of MESFET device by streamline‐diffusion finite element methods
• Hydrodynamic modeling of short-channel devices using an upwind flux vector splitting scheme.
• A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
• Multilevel solution of augmented drift‐diffusion equations
• A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
• Upwind finite volume element methods for one-dimensional semiconductor device
• A perspective on adaptive modeling and meshing (AM\& M)
• Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors

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