A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL

DOI10.1142/S0218202595000383MaRDI QIDQ4854692zbMATH OpenFDO

Authors Xunlei Jiang

Publication date 24 March 1996

Published in M\(^3\)AS. Mathematical Models \& Methods in Applied Sciences (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/S0218202595000383

zbMATH Keywords

discontinuitiesflowsshockssilicon diodesubsonic electronsubsonic electron flowstransonic flowtwo-dimensional time- dependent hydrodynamic model

Mathematics Subject Classification ID

Finite element methods applied to problems in fluid mechanics (76M10) Technical applications of optics and electromagnetic theory (78A55)

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• Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors
• A finite element formulation for the hydrodynamic semiconductor device equations
• Numerical problems in semiconductor simulation using the hydrodynamic model: a second-order finite difference scheme.
• Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method
• A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices
• A relaxation scheme for the hydrodynamic equations for semiconductors
• Hydrodynamic modeling of short-channel devices using an upwind flux vector splitting scheme.
• Semiconductor device simulation using a viscous hydrodynamic model.
• A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
• A shock-capturing upwind discretization method for characterization of SiC MESFETs
• SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS
• A hierarchy of hydrodynamic models for plasmas zero-relaxation-time limits
• Simulation of MESFET device by streamline‐diffusion finite element methods
• Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case
• An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices
• scientific article; zbMATH DE number 1782773 (Why is no real title available?)
• CROSS-VALIDATION OF NUMERICAL SCHEMES FOR EXTENDED HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices.
• Stabilized finite elements for semiconductor device simulation

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