Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method
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Publication:1578659
DOI10.1016/0045-7825(94)00794-NzbMath0943.82591MaRDI QIDQ1578659
N. R. Aluru, Arthur Raefsky, Robert W. Dutton, Kincho H. Law, Peter M. Pinsky
Publication date: 4 September 2000
Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)
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Related Items (6)
Variational multiscale method for nonequilibrium plasma flows ⋮ Residual distribution finite element method for convection-dominated problems ⋮ Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices. ⋮ Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case ⋮ Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors ⋮ Semiconductor device simulation using a viscous hydrodynamic model.
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