Simulation of MESFET device by streamline‐diffusion finite element methods

DOI10.1108/03321649610154186MaRDI QIDQ4331566zbMATH OpenOpenAlexFDO

Authors Xunlei Jiang

Publication date 4 February 1997

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/03321649610154186

zbMATH Keywords

electrical engineeringhydrodynamic modelmetal-semiconductor field effect transistorScharfetter-Gummel discretizationsemiconductor device modelsstreamline-diffusion finite element method

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Applications to the sciences (65Z05) Technical applications of optics and electromagnetic theory (78A55)

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Cites work

• A new finite element formulation for computational fluid dynamics. III: The generalized streamline operator for multidimensional advective- diffusive systems
• A PHASE PLANE ANALYSIS OF TRANSONIC SOLUTIONS FOR THE HYDRODYNAMIC SEMICONDUCTOR MODEL
• A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL
• Conditioning of the Steady State Semiconductor Device Problem
• SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS

Cited in

(10)

• Simulation of semiconductor devices with a local numerical approach
• Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device
• A shock-capturing upwind discretization method for characterization of SiC MESFETs
• scientific article; zbMATH DE number 5539998 (Why is no real title available?)
• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
• scientific article; zbMATH DE number 610316 (Why is no real title available?)
• Full hydrodynamic simulation of GaAs MESFETs
• scientific article; zbMATH DE number 1444672 (Why is no real title available?)
• Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices.
• Local discontinuous Galerkin methods for moment models in device simulations: Performance assessment and two-dimensional results

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