scientific article; zbMATH DE number 1444672

MaRDI QIDQ4952248zbMATH OpenFDO

Authors Joseph W. Jerome, Chi-Wang Shu, Bernardo Cockburn

Publication date 9 May 2000

zbMATH Keywords

benchmark MESFET transistordiscontinuous Galerkin methodsquantum transportRKDG methodsemiconductor devices

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Recommendations

• scientific article; zbMATH DE number 1069616
• Simulation of MESFET device by streamline‐diffusion finite element methods
• A finite element method for the quantum hydrodynamic model for semiconductor devices
• Efficiency considerations for the Boltzmann-Poisson system for semiconductors
• Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices

Cited in

(1)

• scientific article; zbMATH DE number 6694738 (Why is no real title available?)

This page was built for publication:

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4952248)