Mixed finite volume methods for semiconductor device simulation
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Publication:4342160
DOI<215::AID-NUM1>3.0.CO;2-Q 10.1002/(SICI)1098-2426(199705)13:3<215::AID-NUM1>3.0.CO;2-QzbMath0890.65132OpenAlexW2067906924MaRDI QIDQ4342160
Publication date: 6 July 1998
Full work available at URL: https://doi.org/10.1002/(sici)1098-2426(199705)13:3<215::aid-num1>3.0.co;2-q
finite elementsnumerical examplesnonlinear Poisson equationdrift-diffusion equationssemiconductor device simulationGummel iteration proceduremixed finite volume methods
PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)
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Cites Work
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- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
