Mixed finite volume methods for semiconductor device simulation
DOI10.1002/(SICI)1098-2426(199705)13:3%3C215::AID-NUM1%3E3.0.CO;2-QzbMATH Open0890.65132OpenAlexW2067906924MaRDI QIDQ4342160FDOQ4342160
Authors: Riccardo Sacco, F. Saleri 
Publication date: 6 July 1998
Full work available at URL: https://doi.org/10.1002/(sici)1098-2426(199705)13:3%3C215::aid-num1%3E3.0.co;2-q
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numerical examplesfinite elementsdrift-diffusion equationssemiconductor device simulationnonlinear Poisson equationGummel iteration proceduremixed finite volume methods
Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05)
Cites Work
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- Theory of the flow of electrons and holes in Germanium and other semiconductors
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- Global approximate Newton methods
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- L\({}_{\infty}\) stability of finite element approximations to elliptic gradient equations
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
- Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors
Cited In (28)
- A toolkit for numerical simulation of PDEs. I: Fundamentals of generic finite volume simulation.
- Finite element approximation of quasi-3D shallow water equations
- Title not available (Why is that?)
- Simulation of MESFET device by streamline‐diffusion finite element methods
- Numerical solutions of Euler-Poisson systems for potential flows
- MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
- On the existence of solutions for a drift-diffusion system arising in corrosion modeling
- Title not available (Why is that?)
- A discretization scheme for an extended drift-diffusion model including trap-assisted phenomena.
- FINITE VOLUME APPROXIMATION FOR DEGENERATE DRIFT-DIFFUSION SYSTEM IN SEVERAL SPACE DIMENSIONS
- Discretization of Poisson's equation in two domains with non algebraic interface conditions for plasma simulations
- Title not available (Why is that?)
- Mixed finite volume methods on nonstaggered quadrilateral grids for elliptic problems
- A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
- Convergence of a finite volume scheme for a corrosion model
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
- Stability and error analysis of mixed finite-volume methods for advection dominated problems
- Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models
- Mixed initial-boundary value problem in particle modeling of microelectronic devices
- New mixed finite volume methods for second order eliptic problems
- An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
- Quantum-corrected drift-diffusion models for transport in semiconductor devices
- Exponentially fitted mixed finite volumes for energy balance models in semiconductor device simulation
- Dual-primal mixed finite elements for elliptic problems
- Stabilized mixed finite elements for fluid models in semiconductors
- Stabilized finite elements for semiconductor device simulation
- Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors
- Uniform-in-time bounds for approximate solutions of the drift-diffusion system
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