Mixed finite volume methods for semiconductor device simulation
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Publication:4342160
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Cites work
- A new non-conforming Petrov-Galerkin finite-element method with triangular elements for a singularly perturbed advection-diffusion problem
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
- Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors
- Differencing scheme for a differential equation with a small parameter affecting the highest derivative
- Generalized Finite Element Methods: Their Performance and Their Relation to Mixed Methods
- Global approximate Newton methods
- L\({}_{\infty}\) stability of finite element approximations to elliptic gradient equations
- Mixed and Hybrid Finite Element Methods
- Some Error Estimates for the Box Method
- Some upwinding techniques for finite element approximations of convection-diffusion equations
- Theory of the flow of electrons and holes in Germanium and other semiconductors
- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
Cited in
(28)- An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
- A toolkit for numerical simulation of PDEs. I: Fundamentals of generic finite volume simulation.
- scientific article; zbMATH DE number 5226683 (Why is no real title available?)
- Mixed initial-boundary value problem in particle modeling of microelectronic devices
- Finite element approximation of quasi-3D shallow water equations
- MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
- A discretization scheme for an extended drift-diffusion model including trap-assisted phenomena.
- Discretization of Poisson's equation in two domains with non algebraic interface conditions for plasma simulations
- Mixed finite volume methods on nonstaggered quadrilateral grids for elliptic problems
- Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors
- Simulation of MESFET device by streamline‐diffusion finite element methods
- Uniform-in-time bounds for approximate solutions of the drift-diffusion system
- Quantum-corrected drift-diffusion models for transport in semiconductor devices
- scientific article; zbMATH DE number 665491 (Why is no real title available?)
- Exponentially fitted mixed finite volumes for energy balance models in semiconductor device simulation
- Numerical solutions of Euler-Poisson systems for potential flows
- Convergence of a finite volume scheme for a corrosion model
- Stabilized mixed finite elements for fluid models in semiconductors
- Stabilized finite elements for semiconductor device simulation
- A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
- On the existence of solutions for a drift-diffusion system arising in corrosion modeling
- FINITE VOLUME APPROXIMATION FOR DEGENERATE DRIFT-DIFFUSION SYSTEM IN SEVERAL SPACE DIMENSIONS
- scientific article; zbMATH DE number 1371609 (Why is no real title available?)
- Stability and error analysis of mixed finite-volume methods for advection dominated problems
- Dual-primal mixed finite elements for elliptic problems
- Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models
- New mixed finite volume methods for second order eliptic problems
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