Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models
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Publication:2384186
DOI10.1016/j.cma.2005.05.007zbMath1214.82123OpenAlexW2077811612MaRDI QIDQ2384186
Riccardo Sacco, Giuseppe Cassano, Claudio Giulianetti, Carlo de Falco
Publication date: 20 September 2007
Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.cma.2005.05.007
finite element methodfunctional iterationsnanoscale semiconductor devicesquantum drift-diffusion models
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Cites Work
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- Numerical simulation of semiconductor devices
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- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
- Mixed finite volume methods for semiconductor device simulation
