A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
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Publication:709393
DOI10.1016/S0010-4655(03)00203-0zbMATH Open1196.82018MaRDI QIDQ709393FDOQ709393
Authors: Yiming Li 
Publication date: 18 October 2010
Published in: Computer Physics Communications (Search for Journal in Brave)
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Cited In (15)
- Parallel Newton-Krylov-Schwarz algorithms for the three-dimensional Poisson-Boltzmann equation in numerical simulation of colloidal particle interactions
- A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
- Discrete monotone method for space-fractional nonlinear reaction-diffusion equations
- Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation
- Electronic design automation using a unified optimization framework
- Parallel domain decomposition methods for a quantum-corrected drift-diffusion model for MOSFET devices
- A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
- A two-dimensional thin-film transistor simulation using adaptive computing technique
- A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices
- Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices
- Efficient Numerical Solution of the 3-D Semiconductor Poisson Equation for {Monte Carlo} Device Simulation
- A hybrid-line-and-curve search globalization technique for inexact Newton methods
- A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING
- Parallel parameter study of the Wigner-Poisson equations for RTDs
- Title not available (Why is that?)
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