Parallel domain decomposition methods for a quantum-corrected drift-diffusion model for MOSFET devices

DOI10.1016/J.CPC.2018.10.029OpenAlexW2900241614WikidataQ128992379 ScholiaQ128992379MaRDI QIDQ6042301FDOQ6042301

Authors: Shohiro Sho, Shinji Odanaka 

Publication date: 10 May 2023

Published in: Computer Physics Communications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.cpc.2018.10.029

zbMATH Keywords

domain decomposition methodnumerical methodssemiconductorrestricted additive Schwarz methoddevice simulationquantum-corrected drift-diffusion model

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX) Numerical analysis (65-XX)

Cites Work

• Bi-CGSTAB: A Fast and Smoothly Converging Variant of Bi-CG for the Solution of Nonsymmetric Linear Systems
• The Quantum Hydrodynamic Model for Semiconductor Devices
• Why restricted additive Schwarz converges faster than additive Schwarz
• Title not available (Why is that?)
• An introduction to domain decomposition methods. Algorithms, theory, and parallel implementation
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
• A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
• Study of parallel numerical methods for semiconductor device simulation

Cited In (1)

• A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo

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