Study of parallel numerical methods for semiconductor device simulation

DOI10.1002/JNM.596zbMATH Open1155.82342OpenAlexW2124883703MaRDI QIDQ3376593FDOQ3376593

A. J. García-Loureiro, Natalia Seoane

Publication date: 24 March 2006

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.596

zbMATH Keywords

preconditioningnumerical methodsparallel processingsparse linear systemsKrylov solvers

Mathematics Subject Classification ID

Parallel numerical computation (65Y05) Ill-posedness and regularization problems in numerical linear algebra (65F22) Statistical mechanics of semiconductors (82D37)

Cites Work

• Title not available (Why is that?)

Cited In (4)

• Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies
• Parallel domain decomposition methods for a quantum-corrected drift-diffusion model for MOSFET devices
• Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

Uses Software

• P-SPARSLIB
• PETSc
• MUMPS
• AztecOO
• METIS
• Aztec

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