A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
DOI10.1016/J.CAMWA.2014.02.021zbMATH Open1362.35304OpenAlexW2019733925MaRDI QIDQ2397192FDOQ2397192
Authors: F. Vecil, José Miguel Mantas, Carlos Sampedro, Andrés Godoy, Francisco Gámiz, Maria José Cáceres 
Publication date: 30 May 2017
Published in: Computers & Mathematics with Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.camwa.2014.02.021
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Cites Work
- A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET
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Cited In (8)
- A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs
- A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- Hybrid fluid-quantum coupling for the simulation of the transport of partially quantized particles in a DG-MOSFET
- Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
- Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap
- A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET
- An improved 2D-3D model for charge transport based on the maximum entropy principle
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