A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
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Cites work
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- scientific article; zbMATH DE number 2238171 (Why is no real title available?)
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
- A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects
- A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- A note on the long time behavior for the drift-diffusion-Poisson system
- A semi-Lagrangian deterministic solver for the semiconductor Boltzmann-Poisson system
- Analysis of a drift-diffusion-Schrödinger-Poisson model
- Computational science and its applications -- ICCSA 2010. International conference, Fukuoka, Japan, March 23--26, 2010. Proceedings, Part I
- Conservative numerical schemes for the Vlasov equation
- DIFFUSIVE TRANSPORT OF PARTIALLY QUANTIZED PARTICLES: EXISTENCE, UNIQUENESS AND LONG-TIME BEHAVIOUR
- Deterministic solvers for the Boltzmann transport equation.
- Diffusion approximation for the one-dimensional Boltzmann-Poisson system
- Efficient deterministic parallel simulation of 2D semiconductor devices based on WENO-Boltzmann schemes
- Nonoscillatory Interpolation Methods Applied to Vlasov-Based Models
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- On the Construction and Comparison of Difference Schemes
- Semiclassical analysis of the Schrödinger equation with a partially confining potential
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
Cited in
(8)- Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap
- Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
- A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs
- An improved 2D-3D model for charge transport based on the maximum entropy principle
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET
- Hybrid fluid-quantum coupling for the simulation of the transport of partially quantized particles in a DG-MOSFET
- A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs
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