A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
DOI10.1016/j.camwa.2014.02.021zbMath1362.35304MaRDI QIDQ2397192
Carlos Sampedro, José M. Mantas, Francesco Vecil, Andrés Godoy, Francisco Gámiz, Maria José Cáceres
Publication date: 30 May 2017
Published in: Computers \& Mathematics with Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.camwa.2014.02.021
Schrödinger-Poisson system; WENO schemes; subband decomposition; quantum-classical dimensional coupling; parallelization of numerical algorithms
82D37: Statistical mechanics of semiconductors
65Y05: Parallel numerical computation
65M55: Multigrid methods; domain decomposition for initial value and initial-boundary value problems involving PDEs
35Q82: PDEs in connection with statistical mechanics
Related Items
Uses Software
Cites Work
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
- Efficient deterministic parallel simulation of 2D semiconductor devices based on WENO-Boltzmann schemes
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- Computational science and its applications -- ICCSA 2010. International conference, Fukuoka, Japan, March 23--26, 2010. Proceedings, Part I
- Analysis of a drift-diffusion-Schrödinger-Poisson model
- A note on the long time behavior for the drift-diffusion-Poisson system
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- Diffusion approximation for the one-dimensional Boltzmann-Poisson system
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- Semiclassical analysis of the Schrödinger equation with a partially confining potential
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
- A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects
- A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET
- Deterministic Solvers for the Boltzmann Transport Equation
- DIFFUSIVE TRANSPORT OF PARTIALLY QUANTIZED PARTICLES: EXISTENCE, UNIQUENESS AND LONG-TIME BEHAVIOUR
- Nonoscillatory Interpolation Methods Applied to Vlasov-Based Models
- A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs
- On the Construction and Comparison of Difference Schemes
- Conservative numerical schemes for the Vlasov equation