Efficient deterministic parallel simulation of 2D semiconductor devices based on WENO-Boltzmann schemes
DOI10.1016/J.CMA.2008.10.003zbMATH Open1229.78027OpenAlexW2126386662MaRDI QIDQ658164FDOQ658164
Authors: José Miguel Mantas, Maria José Cáceres
Publication date: 11 January 2012
Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.cma.2008.10.003
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Cites Work
- LAPACK Users' Guide
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- Efficient implementation of weighted ENO schemes
- Title not available (Why is that?)
- Total variation diminishing Runge-Kutta schemes
- Multidomain WENO finite difference method with interpolation at subdomain interfaces
- Graphics processor units: new prospects for parallel computing
- Resolution of high order WENO schemes for complicated flow structures.
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
- Title not available (Why is that?)
- Deterministic kinetic solvers for charged particle transport in semiconductor devices
- A distributed memory parallel element-by-element scheme for semiconductor device simulation
- Parallelization of WENO-Boltzmann schemes for kinetic descriptions of 2D semiconductor devices
Cited In (5)
- Parallelization of WENO-Boltzmann schemes for kinetic descriptions of 2D semiconductor devices
- A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
- Parallel parameter study of the Wigner-Poisson equations for RTDs
Uses Software
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