A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET

DOI10.1016/J.JCP.2005.08.003MaRDI QIDQ2581696zbMATH OpenOpenAlexFDO

Authors M. Galler, F. Schürrer

Publication date 10 January 2006

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.jcp.2005.08.003

zbMATH Keywords

Boltzmann--Poisson systemGaAs-MESFETMultigroup approachSemiconductor device simulationWENO scheme

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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Cites work

• A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
• A Multigroup Approach to the Coupled Electron‐Phonon Boltzmann Equations in InP
• A multigroup WENO solver for the non-stationary Boltzmann--Poisson system for semiconductor devices
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• Deterministic particle simulations of the Boltzmann transport equation of semiconductors
• Efficient implementation of essentially nonoscillatory shock-capturing schemes
• Efficient implementation of weighted ENO schemes
• Electrons and phonons. Reprint
• scientific article; zbMATH DE number 3936413 (Why is no real title available?)
• scientific article; zbMATH DE number 914383 (Why is no real title available?)
• Multigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors
• Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices

Cited in

(8)

• GaAs-MESFET
• A conservative multi-group approach to the Boltzmann equations for reactive gas mixtures
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
• A multigroup WENO solver for the non-stationary Boltzmann--Poisson system for semiconductor devices
• Deterministic Simulation of the Boltzmann--Poisson System in GaAs-Based Semiconductors
• Adaptive energy discretization of the semiconductor Boltzmann equation
• A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs

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