Deterministic particle simulations of the Boltzmann transport equation of semiconductors

DOI10.1016/0021-9991(88)90053-8MaRDI QIDQ1114372zbMATH OpenOpenAlexFDO

Authors B. Niclot, Pierre Degond, F. Poupaud

Publication date 1988

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/0021-9991(88)90053-8

zbMATH Keywords

Boltzmann transport equationcollision integralcollision operatorlattice temperatureMaxwell distributionPolar optimal scatteringrelaxation time modelssemi-conductors

Mathematics Subject Classification ID

Integro-partial differential equations (45K05) Numerical methods for integral equations (65R20) Transport processes in time-dependent statistical mechanics (82C70)

Review text

For the simulation of the Boltzmann transport equation of semi- conductors, the authors treat the collision integral in a deterministic way. The paper starts with a general presentation of the kinetic model of semiconductors. The collision operator is simplified by neglecting the Pauli factor. The method is restricted to the homogeneous field case. A brief outline of the numerical analysis of the method is given. This illustrates the numerical tests in the case of relaxation time models, which are expressed in terms of the Maxwell distribution for the lattice temperature. Polar optimal scattering, which describes the collisions between electrons and photons, and its simplified one-dimensional relaxation time model are investigated. The same analysis is performed for the intervalley scattering.

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Cites work

• A deterministic particle method for the linearized Boltzmann equation
• Approximation of the transport equation by a weighted particle method
• scientific article; zbMATH DE number 41859 (Why is no real title available?)

Cited in

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• A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
• Particle simulation and asymptotic analysis of kinetic equations for modeling a Schottky diode
• Numerical methods for kinetic equations in semiconductor superlattices
• The Consistency and the Monte Carlo Method for Semiconductor Boltzmann Equations with Multivalley
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• Adaptive energy discretization of the semiconductor Boltzmann equation
• Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley
• Self-sustained current oscillations in the kinetic theory of semiconductor superlattices
• A new numerical method for kinetic equations in several dimensions
• Particle simulations of the semiconductor Boltzmann equation for one- dimensional inhomogeneous structures
• Numerical simulation of semiconductor devices
• A particle method for collisional kinetic equations. I: Basic theory and one-dimensional results

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