Numerical simulations of an energy-transport model for partially quantized particles

DOI10.4310/CMS.2014.V12.N1.A5MaRDI QIDQ2017234zbMATH OpenOpenAlexFDO

Authors Paola Pietra, Nicolas Vauchelet

Publication date 25 June 2014

Published in Communications in Mathematical Sciences (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1206.7023

zbMATH Keywords

mixed finite elementsnanotransistorenergy-transport systemsubband modelGummel iterationsSchrödinger equation

Mathematics Subject Classification ID

Schrödinger operator, Schrödinger equation (35J10) Boltzmann equations (35Q20) NLS equations (nonlinear Schrödinger equations) (35Q55) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Applications to the sciences (65Z05) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

Abstract: A coupled quantum-classical model describing the transport of electrons confined in nanoscale semiconductor devices is considered. Using the subband decomposition approach allows to separate the transport directions from the confinement direction. The motion of the gas in the transport direction is assumed to be classical. Then a hierarchy of adiabatic quantum-classical model is obtained, leading to subband SHE and energy-transport models, with explicit expression of the diffusion coefficients. The energy-transport-Schr"odinger-Poisson model is then used for the numerical simulation of the transport of the electron gas in an ultra-scaled Double-Gate-MOSFET.

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Cited in

(15)

• A quantum drift-diffusion model and its use into a hybrid strategy for strongly confined nanostructures
• A Model of a Quantum Particle in a Quantum Environment: A Numerical Study
• Diffusive limit of a two dimensional kinetic system of partially quantized particles
• Mixed boundary conditions for a simplified quantum energy-transport model in multi-dimensional domains
• Subband diffusion models for quantum transport in a strong force regime
• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
• scientific article; zbMATH DE number 7441467 (Why is no real title available?)
• A quantum energy transport model for semiconductor device simulation
• A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
• Hybrid fluid-quantum coupling for the simulation of the transport of partially quantized particles in a DG-MOSFET
• Analysis of a quantum subband model for the transport of partially confined charged particles
• Hybrid coupling of a one-dimensional energy-transport Schrödinger system
• An effective mass model for the simulation of ultra-scaled confined devices
• A quantum corrected energy-transport model for nanoscale semiconductor devices
• Electric power in nanoscale devices with full Coulomb interaction

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