A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices

From MaRDI portal
Publication:5957383

DOI10.1006/jcph.2001.6929zbMath0992.82047OpenAlexW2039847662MaRDI QIDQ5957383

Armando Majorana, R. M. Pidatella

Publication date: 18 June 2002

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1006/jcph.2001.6929




Related Items

A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solverOn the Modeling and Simulation of Reaction-Transfer Dynamics in Semiconductor-Electrolyte Solar CellsGalerkin methods for Boltzmann-Poisson transport with reflection conditions on rough boundariesConvergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valleyA brief survey of the discontinuous Galerkin method for the Boltzmann-Poisson equationsA discontinuous Galerkin solver for Boltzmann-Poisson systems in nano-devicesSimulation of shock wave diffraction over \(90^\circ \) sharp corner in gases of arbitrary statisticsRecovering doping profiles in semiconductor devices with the Boltzmann-Poisson modelMultigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methodsAdaptive energy discretization of the semiconductor Boltzmann equationOn the Cauchy problem for spatially homogeneous semiconductor Boltzmann equations: existence and uniquenessSemicontinuous Kinetic Theory of the Relaxation of Electrons in GaAsA Multigroup Approach to the Coupled Electron‐Phonon Boltzmann Equations in InPDiscontinuous Galerkin deterministic solvers for a Boltzmann-Poisson model of hot electron transport by averaged empirical pseudopotential band structuresPositivity-preserving discontinuous Galerkin schemes for linear Vlasov-Boltzmann transport equationsSimulation of silicon semiconductor devices by means of a direct Boltzmann‐Poisson solverA direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFETAuger effect in the generalized kinetic theory of electrons and holes



Cites Work