Auger effect in the generalized kinetic theory of electrons and holes

DOI10.1063/1.2161020zbMath1111.82314OpenAlexW1992498201MaRDI QIDQ3438747

Alberto Rossani, Giampiero Spiga

Publication date: 16 May 2007

Published in: Journal of Mathematical Physics (Search for Journal in Brave)

Full work available at URL: https://semanticscholar.org/paper/01ccb739413e32802219ee2376d00f3411ac8b0b

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Kinetic theory of gases in time-dependent statistical mechanics (82C40)

Related Items (3)

A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry ⋮ Electron-phonon interactions in the Fermi-Dirac spintronics ⋮ Generation-recombination Models in the Matrix Kinetic Approach to Spintronics

Cites Work

• Possible generalization of Boltzmann-Gibbs statistics.
• A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
• Band-trap capture and emission in the generalized kinetic theory of electrons and holes
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
• Generalized kinetic theory of electrons and phonons

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