Generation-recombination Models in the Matrix Kinetic Approach to Spintronics

DOI10.1080/23324309.2017.1419976MaRDI QIDQ5029211zbMATH OpenOpenAlexWikidataFDO

Authors A. Rossani

Publication date 11 February 2022

Published in Journal of Computational and Theoretical Transport (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1080/23324309.2017.1419976

zbMATH Keywords

kinetic theoryspintronicselectron transportgeneration-recombination

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

Cites work

• scientific article; zbMATH DE number 108361 (Why is no real title available?)
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Auger effect in the generalized kinetic theory of electrons and holes
• Band-trap capture and emission in the generalized kinetic theory of electrons and holes
• Electron-phonon hydrodynamical model for semiconductors
• Generalized balance equations for an electron-phonon system
• Generalized kinetic theory of electrons and phonons
• Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors

Cited in

(1)

• Application of the discrete Wentzel–Kramers–Brillouin method to spin tunneling

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