Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
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Publication:3156132
DOI10.1108/03321640410510578zbMath1125.82324MaRDI QIDQ3156132
Orazio Muscato, Armando Majorana, Cristina L. R. Milazzo
Publication date: 6 January 2005
Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/03321640410510578
76P05: Rarefied gas flows, Boltzmann equation in fluid mechanics
65M06: Finite difference methods for initial value and initial-boundary value problems involving PDEs
82D37: Statistical mechanics of semiconductors
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