A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects

DOI10.1016/J.JCP.2005.04.021MaRDI QIDQ2568067zbMATH OpenOpenAlexFDO

Authors M. Galler, F. Schürrer

Publication date 7 October 2005

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.jcp.2005.04.021

zbMATH Keywords

AlGaN/GaN heterostructureBloch-Boltzmann-Peierls equationBoltzmann transport equationhot phonon effectsmultigroup modelPoisson-Schrödinger solver

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Kinetic theory of gases in time-dependent statistical mechanics (82C40)

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Cites work

• A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
• Electrons and phonons. Reprint
• scientific article; zbMATH DE number 914383 (Why is no real title available?)
• Multigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors

Cited in

(7)

• A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
• ENERGY EXCHANGE RATE IN NON-DEGENERATE ELECTRON GAS CONFINED TO A GaAs HETEROSTRUCTURE
• LOW-FIELD ELECTRON TRANSPORT PROPERTIES IN ZINCBLENDE AND WURTZITE GaN STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION
• Stochastic simulation of electron transport in a strong electrical field in low-dimensional heterostructures
• A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
• Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT
• Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices

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