Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors

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Publication:5117435

DOI10.1007/978-3-030-43651-3_14zbMATH Open1471.65175arXiv2002.10133OpenAlexW3007834591MaRDI QIDQ5117435FDOQ5117435


Authors: Markus Kantner, Thomas Koprucki Edit this on Wikidata


Publication date: 25 August 2020

Published in: Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples (Search for Journal in Brave)

Abstract: Electro-thermal transport phenomena in semiconductors are described by the non-isothermal drift-diffusion system. The equations take a remarkably simple form when assuming the Kelvin formula for the thermopower. We present a novel, non-isothermal generalization of the Scharfetter-Gummel finite volume discretization for degenerate semiconductors obeying Fermi-Dirac statistics, which preserves numerous structural properties of the continuous model on the discrete level. The approach is demonstrated by 2D simulations of a heterojunction bipolar transistor.


Full work available at URL: https://arxiv.org/abs/2002.10133




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