ASYMPTOTICAL AND NUMERICAL ANALYSIS OF DEGENERACY EFFECTS ON THE DRIFT-DIFFUSION EQUATIONS FOR SEMICONDUCTORS
From MaRDI portal
Publication:4879155
Recommendations
- Asymptotic analysis of the degenerate Boltzmann-Poisson system for semiconductors
- High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
- Publication:4504205
Cited in
(11)- New developments in the numerical approximation of the drift-diffusion semiconductor device equation
- scientific article; zbMATH DE number 1931110 (Why is no real title available?)
- MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
- Asymptotic behavior of the drift-diffusion semiconductor equations
- Relaxation-time limit in the multi-dimensional bipolar nonisentropic Euler-Poisson systems
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- scientific article; zbMATH DE number 854369 (Why is no real title available?)
- From the Boltzmann equation to generalized kinetic models in applied sciences
- Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors
- Asymptotic analysis of the degenerate Boltzmann-Poisson system for semiconductors
- Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
This page was built for publication: ASYMPTOTICAL AND NUMERICAL ANALYSIS OF DEGENERACY EFFECTS ON THE DRIFT-DIFFUSION EQUATIONS FOR SEMICONDUCTORS
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4879155)
