scientific article; zbMATH DE number 854369
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Publication:4869443
DOI<401::AID-MMA795>3.0.CO;2-L 10.1002/(SICI)1099-1476(19960325)19:5<401::AID-MMA795>3.0.CO;2-LzbMath0860.35008MaRDI QIDQ4869443
Publication date: 29 April 1997
Title: zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Singular perturbations in context of PDEs (35B25) Degenerate parabolic equations (35K65) Motion of charged particles (78A35)
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Stationary equations for charge carriers in semiconductors including electron-hole scattering ⋮ Diffusive semiconductor moment equations using Fermi-Dirac statistics ⋮ The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions ⋮ On a quasilinear degenerate system arising in semiconductors theory. I: Existence and uniqueness of solutions ⋮ Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation ⋮ Existence of weak solutions to a class of degenerate semiconductor equations modeling avalanche generation ⋮ On a quasilinear degenerate system arising in semiconductor theory. Part II: Localization of vacuum solutions
Cites Work
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- ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR DEVICES
- ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- Semiconductor Equations for variable Mobilities Based on Boltzmann Statistics or Fermi-Dirac Statistics
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
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