scientific article; zbMATH DE number 854369
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Publication:4869443
DOI10.1002/(SICI)1099-1476(19960325)19:5%3C401::AID-MMA795%3E3.0.CO;2-LzbMATH Open0860.35008MaRDI QIDQ4869443FDOQ4869443
Authors: Ansgar Jüngel 
Publication date: 29 April 1997
Title of this publication is not available (Why is that?)
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Cites Work
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- Charge transport in semiconductors with degeneracy effects
- ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR DEVICES
- ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
- Semiconductor Equations for variable Mobilities Based on Boltzmann Statistics or Fermi-Dirac Statistics
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Cited In (11)
- Semiconductors, Fermi statistics and multi-dimensional Cantor sets
- On a quasilinear degenerate system arising in semiconductor theory. Part II: Localization of vacuum solutions
- Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
- On a quasilinear degenerate system arising in semiconductors theory. I: Existence and uniqueness of solutions
- Analytical evaluation of the thermionic emission probability for semiconductor-insulator interfaces using incomplete gamma functions
- Existence of weak solutions to a class of degenerate semiconductor equations modeling avalanche generation
- A system of convection-diffusion equations with small diffusion coefficient arising in semiconductor physics
- Degenerate drift-diffusion systems for memristors
- Diffusive semiconductor moment equations using Fermi-Dirac statistics
- Stationary equations for charge carriers in semiconductors including electron-hole scattering
- The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions
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