scientific article; zbMATH DE number 854369

DOI10.1002/(SICI)1099-1476(19960325)19:5%3C401::AID-MMA795%3E3.0.CO;2-LMaRDI QIDQ4869443zbMATH OpenFDO

Authors Ansgar Jüngel

Publication date 29 April 1997

zbMATH Keywords

high injection regime

Mathematics Subject Classification ID

Singular perturbations in context of PDEs (35B25) Degenerate parabolic equations (35K65) Motion of charged particles (78A35)

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Cites work

• scientific article; zbMATH DE number 3243678 (Why is no real title available?)
• Charge transport in semiconductors with degeneracy effects
• Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
• ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
• ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR DEVICES
• QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
• Semiconductor Equations for variable Mobilities Based on Boltzmann Statistics or Fermi-Dirac Statistics

Cited in

(11)

• Semiconductors, Fermi statistics and multi-dimensional Cantor sets
• On a quasilinear degenerate system arising in semiconductor theory. Part II: Localization of vacuum solutions
• Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
• On a quasilinear degenerate system arising in semiconductors theory. I: Existence and uniqueness of solutions
• Analytical evaluation of the thermionic emission probability for semiconductor-insulator interfaces using incomplete gamma functions
• Existence of weak solutions to a class of degenerate semiconductor equations modeling avalanche generation
• A system of convection-diffusion equations with small diffusion coefficient arising in semiconductor physics
• Diffusive semiconductor moment equations using Fermi-Dirac statistics
• Degenerate drift-diffusion systems for memristors
• Stationary equations for charge carriers in semiconductors including electron-hole scattering
• The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions

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