ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR DEVICES
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Publication:4287670
DOI10.1142/S021820259400008XzbMATH Open0801.35133MaRDI QIDQ4287670FDOQ4287670
Authors: Herbert Gajewski 
Publication date: 12 April 1994
Published in: M\(^3\)AS. Mathematical Models \& Methods in Applied Sciences (Search for Journal in Brave)
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- DIFFUSION AND HOMOGENIZATION APPROXIMATION FOR SEMICONDUCTOR BOLTZMANN–POISSON SYSTEM
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- FINITE VOLUME APPROXIMATION FOR DEGENERATE DRIFT-DIFFUSION SYSTEM IN SEVERAL SPACE DIMENSIONS
- A Wasserstein gradient flow approach to Poisson-Nernst-Planck equations
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- The drift-diffusion system in two-dimensional critical Hardy space
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- Convergence of a finite volume scheme for a corrosion model
- Finite time blow up for a solution to system of the drift-diffusion equations in higher dimensions
- Diffusion limit of a Boltzmann-Poisson system: case of general inflow boundary data profile
- Uniqueness for the two-dimensional semiconductor equations in case of high carrier densities
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- Local existence result in time for a drift-diffusion system with Robin boundary conditions
- On the entropy and exponential convergence to equilibrium for the recombination-drift-diffusion system for scintillators
- The existence and uniqueness of the solution of the boundary-value problem for the one-dimensional drift-diffusion model of a semiconductor device
- Degenerate drift-diffusion systems for memristors
- Boundary layer analysis and quasi-neutral limits in the drift-diffusion equations
- Numerical analysis of DAEs from coupled circuit and semiconductor simulation
- Well-posedness for the drift-diffusion system in \(L^p\) arising from the semiconductor device simulation
- An augmented drift-diffusion model in a semiconductor device
- Existence, decay time and light yield for a reaction-diffusion-drift equation In the continuum physics of scintillators
- Asymptotic behavior of solutions for the one-dimensional drift-diffusion model in the quarter plane
- Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains
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