Thermodynamic design of energy models of semiconductor devices
From MaRDI portal
Publication:4533439
DOI10.1088/0951-7715/15/2/307zbMath1001.82117OpenAlexW1987498276MaRDI QIDQ4533439
Herbert Gajewski, R. Hünlich, Günter Albinus
Publication date: 11 June 2002
Published in: Nonlinearity (Search for Journal in Brave)
Full work available at URL: https://semanticscholar.org/paper/029d55bfb86918fb38a32e487e795a07542409f2
Lua error in Module:PublicationMSCList at line 37: attempt to index local 'msc_result' (a nil value).
Related Items (23)
On uniform decay of the entropy for reaction-diffusion systems ⋮ On thermodynamically consistent models and gradient structures for thermoplasticity ⋮ Energy transport in semiconductor devices ⋮ Modeling of chemical reaction systems with detailed balance using gradient structures ⋮ Diffusive semiconductor moment equations using Fermi-Dirac statistics ⋮ A gradient structure for systems coupling reaction-diffusion effects in bulk and interfaces ⋮ A coarse‐grained electrothermal model for organic semiconductor devices ⋮ A continuum theory of scintillation in inorganic scintillating crystals ⋮ Numerical modeling of anisotropic ferroelectric materials with hybridizable discontinuous Galerkin methods ⋮ Decay to Equilibrium for Energy-Reaction-Diffusion Systems ⋮ Non-isothermal Scharfetter–Gummel Scheme for Electro-Thermal Transport Simulation in Degenerate Semiconductors ⋮ On unique solvability of nonlocal drift--diffusion-type problems. ⋮ Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient ⋮ Mathematical Modeling of Semiconductors: From Quantum Mechanics to Devices ⋮ Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains ⋮ Existence, Decay Time and Light Yield for a Reaction-Diffusion-Drift Equation in the Continuum Physics of Scintillators ⋮ Convergence to equilibrium in energy-reaction-diffusion systems using vector-valued functional inequalities ⋮ Global existence and decay in nonlinearly coupled reaction-diffusion-advection equations with different velocities ⋮ Group classification of an energy transport model for semiconductors with crystal heating ⋮ Analysis of a hybrid model for the electro-thermal behavior of semiconductor heterostructures ⋮ Gradient structures and geodesic convexity for reaction–diffusion systems ⋮ An existence result for a class of electrothermal drift-diffusion models with Gauss–Fermi statistics for organic semiconductors ⋮ Global Existence Analysis of Energy-Reaction-Diffusion Systems
This page was built for publication: Thermodynamic design of energy models of semiconductor devices