A two-dimensional thin-film transistor simulation using adaptive computing technique

DOI10.1016/J.AMC.2005.12.073zbMATH Open1106.82042OpenAlexW2008962391MaRDI QIDQ870120FDOQ870120

Yiming Li

Publication date: 12 March 2007

Published in: Applied Mathematics and Computation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.amc.2005.12.073

zbMATH Keywords

monotone iterative methodgrain boundarydrift-diffusion equationssemiconductor device simulationadaptive computingnonlinear trap modelthin-film transistor

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37)

Cites Work

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• A Proof of Convergence of Gummel’s Algorithm for Realistic Device Geometries
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
• Stability of finite volume approximations for the Laplacian operator on quadrilateral and triangular grids
• Finite volume methods for convection-diffusion problems
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
• A new 3D finite element for adaptive h‐refinement in 1‐irregular meshes
• A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
• Accelerated monotone iterations for numerical solutions of nonlinear elliptic boundary value problems
• A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET
• A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices

Cited In (1)

• An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors

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