A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET

DOI10.1016/S0010-4655(02)00368-5zbMATH Open0994.82501MaRDI QIDQ696728FDOQ696728

Authors: Yiming Li, Tien-Sheng Chao, S. M. Sze 

Publication date: 12 September 2002

Published in: Computer Physics Communications (Search for Journal in Brave)

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Title not available (Why is that?)
• Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
• Title not available (Why is that?)

Cited In (3)

• A two-dimensional thin-film transistor simulation using adaptive computing technique
• A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation

This page was built for publication: A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q696728)