A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING

DOI10.1108/eb010312zbMath0637.65126OpenAlexW2112061029WikidataQ56970432 ScholiaQ56970432MaRDI QIDQ3777396

Conor J. Fitzsimons

Publication date: 1987

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010312

zbMATH Keywords

Newton's methodnonlinear Poisson equationsemiconductor devicemetal oxide semiconductur field effect transistors

Mathematics Subject Classification ID

Numerical computation of solutions to systems of equations (65H10) Nonlinear boundary value problems for linear elliptic equations (35J65) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05) Electro- and magnetostatics (78A30) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Experimental work for problems pertaining to optics and electromagnetic theory (78-05)

Related Items (1)

A mixed problem for electrostatic potential in semiconductors

Cites Work

• Global approximate Newton methods
• Parameter Selection for Newton-Like Methods Applicable to Nonlinear Partial Differential Equations
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