A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING
Newton's methodsemiconductor devicenonlinear Poisson equationmetal oxide semiconductur field effect transistors
Technical applications of optics and electromagnetic theory (78A55) Numerical computation of solutions to systems of equations (65H10) Electro- and magnetostatics (78A30) Nonlinear boundary value problems for linear elliptic equations (35J65) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Applications to the sciences (65Z05) Experimental work for problems pertaining to optics and electromagnetic theory (78-05)
- scientific article; zbMATH DE number 3982451
- An Approximate Newton Method for the Solution of the Basic Semiconductor Device Equations
- A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
- scientific article; zbMATH DE number 465137
- Convergent algorithms suitable for the solution of the semiconductor device equations
- scientific article; zbMATH DE number 4106228 (Why is no real title available?)
- Numerical simulation of nonlinear processes in semiconductor devices with the application of the Newton's method for linearization
- scientific article; zbMATH DE number 465137 (Why is no real title available?)
- A mixed problem for electrostatic potential in semiconductors
- A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
- Convergent algorithms suitable for the solution of the semiconductor device equations
- The solution of the one-dimensional nonlinear Poisson's equations by the decomposition method
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