A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING

DOI10.1108/EB010312zbMATH Open0637.65126OpenAlexW2112061029WikidataQ56970432 ScholiaQ56970432MaRDI QIDQ3777396FDOQ3777396

Authors: Conor J. Fitzsimons 

Publication date: 1987

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010312

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zbMATH Keywords

Newton's methodsemiconductor devicenonlinear Poisson equationmetal oxide semiconductur field effect transistors

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Numerical computation of solutions to systems of equations (65H10) Electro- and magnetostatics (78A30) Nonlinear boundary value problems for linear elliptic equations (35J65) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Applications to the sciences (65Z05) Experimental work for problems pertaining to optics and electromagnetic theory (78-05)

Cites Work

• Title not available (Why is that?)
• Global approximate Newton methods
• Title not available (Why is that?)
• Parameter Selection for Newton-Like Methods Applicable to Nonlinear Partial Differential Equations

Cited In (7)

• Title not available (Why is that?)
• The solution of the one-dimensional nonlinear Poisson's equations by the decomposition method
• Numerical simulation of nonlinear processes in semiconductor devices with the application of the Newton's method for linearization
• Title not available (Why is that?)
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
• Convergent algorithms suitable for the solution of the semiconductor device equations
• A mixed problem for electrostatic potential in semiconductors

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