A mixed problem for electrostatic potential in semiconductors

DOI10.1002/num.1690100607zbMath0809.65125OpenAlexW2021758253MaRDI QIDQ4314854

Riccardo Sacco

Publication date: 2 April 1995

Published in: Numerical Methods for Partial Differential Equations (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/num.1690100607

zbMATH Keywords

finite element methodelectrostatic potentialsemiconductor problem

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05) Electro- and magnetostatics (78A30)

Related Items (1)

Quantum-corrected drift-diffusion models for transport in semiconductor devices

Cites Work

• A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING

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