A discretization scheme for an extended drift-diffusion model including trap-assisted phenomena.

MaRDI QIDQ1976830zbMATH OpenFDO

Authors F. Bosisio, Stefano Micheletti, Riccardo Sacco

Publication date 23 November 2000

Published in Journal of Computational Physics (Search for Journal in Brave)

zbMATH Keywords

mixed finite elementssemiconductorsNewton-Krylov methods

Mathematics Subject Classification ID

Applications to the sciences (65Z05) Statistical mechanics of semiconductors (82D37)

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Cites work

• scientific article; zbMATH DE number 3733201 (Why is no real title available?)
• scientific article; zbMATH DE number 108361 (Why is no real title available?)
• scientific article; zbMATH DE number 635667 (Why is no real title available?)
• scientific article; zbMATH DE number 682489 (Why is no real title available?)
• scientific article; zbMATH DE number 1127661 (Why is no real title available?)
• scientific article; zbMATH DE number 3895476 (Why is no real title available?)
• scientific article; zbMATH DE number 3215568 (Why is no real title available?)
• A Proof of Convergence of Gummel’s Algorithm for Realistic Device Geometries
• Conditioning of the Steady State Semiconductor Device Problem
• Current-voltage characteristics simulation of semiconductor devices using domain decomposition
• Exponentially fitted mixed finite volumes for energy balance models in semiconductor device simulation
• GMRES: A Generalized Minimal Residual Algorithm for Solving Nonsymmetric Linear Systems
• Global approximate Newton methods
• Mixed and Hybrid Finite Element Methods
• Mixed finite volume methods for semiconductor device simulation
• On acceleration methods for coupled nonlinear elliptic systems
• On some mixed finite element methods with numerical integration
• Stabilized mixed finite elements for fluid models in semiconductors
• Statistics of the Recombinations of Holes and Electrons
• Uniform Asymptotic Representation of Solutions of the Basic Semiconductor-Device Equations

Cited in

(4)

• Hierarchical electrochemical modeling and simulation of bio-hybrid interfaces
• Jacobian-free Newton-Krylov methods: a survey of approaches and applications.
• Numerical algorithms based on Galerkin methods for the modeling of reactive interfaces in photoelectrochemical (PEC) solar cells
• Quantum-corrected drift-diffusion models for transport in semiconductor devices

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